BL12N60
Planar Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Brand:
Shanghai Belling
Encapsulation:
TO220, TO220F
Description:
VDS (Max.): 600 V / ID (Max.): 12 A / RDS(on) (Max.): 500 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 600V
ID (Max.): 12A
RDS(on) (Max.): 500 mΩ
Qg(Type): 48 nC
Packaging: TO220, TO220F
- VDS (Max.): 600 V / ID (Max.): 12 A / RDS(on) (Max.): 500 mΩ
Keywords:
Transistor, MOS, MOSFET
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