Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 15A
RDS(on) (Max.): 90 mΩ
Qg(Type): 20 nC
Packaging: SOP8, TO251, TO252
VDS (Max.): 100V
ID (Max.): 15A
RDS(on) (Max.): 90 mΩ
Qg(Type): 20 nC
Packaging: SOP8, TO251, TO252
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
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BLM90N10L
Trench-gate metal-oxide-semiconductor field-effect transistor
Brand:
Shanghai Belling
Encapsulation:
SOP8, TO251, TO252
Description:
VDS (Max.): 100V / ID (Max.): 15A / RDS(on) (Max.): 90mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 15A
RDS(on) (Max.): 90 mΩ
Qg(Type): 20 nC
Packaging: SOP8, TO251, TO252
- VDS (Max.): 100V / ID (Max.): 15A / RDS(on) (Max.): 90mΩ
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
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