BLM70P06-DP
Trench-gate metal-oxide-semiconductor field-effect transistor
Brand:
Shanghai Belling
Encapsulation:
TO252, TO220
Description:
VDS (Max.): -60V / ID (Max.): -14A / RDS(on) (Max.): 79mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): -60V
ID (Max.): -14A
RDS(on) (Max.): 79 mΩ
Qg(Type): 21 nC
Packaging: TO252, TO220
- VDS (Max.): -60V / ID (Max.): -14A / RDS(on) (Max.): 79mΩ
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
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