BLM4435
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  • BLM4435

Product Technical Specifications

Brand: Shanghai Belling
VDS (Max.): -30V
ID (Max.): -12A
RDS(on) (Max.): 11.5 mΩ
Qg(Type): 24 nC
Package: SOP8

Keywords:

Transistors, trench-gate field-effect transistors, MOSFETs, MOS

BLM4435

Trench-gate metal-oxide-semiconductor field-effect transistor

Category:

Brand:

Shanghai Belling

Encapsulation:

SOP8

Description:

VDS (Max.): -30V / ID (Max.): -12A / RDS(on) (Max.): 11.5 mΩ

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  • Product Description
  • Description
  • Brand: Shanghai Belling
    VDS (Max.): -30V
    ID (Max.): -12A
    RDS(on) (Max.): 11.5 mΩ
    Qg(Type): 24 nC
    Package: SOP8
  • VDS (Max.): -30V / ID (Max.): -12A / RDS(on) (Max.): 11.5 mΩ

Keywords:

Transistors, trench-gate field-effect transistors, MOSFETs, MOS

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