Product Technical Specifications
Brand: Shanghai Belling
VDS (Max.): 60V
ID (Max.): 25A
RDS(on) (Max.): 25 mΩ
Qg(Type): 21 nC
Packaging: TO252, TO251, PDFN3.3x3.3, SOT223
VDS (Max.): 60V
ID (Max.): 25A
RDS(on) (Max.): 25 mΩ
Qg(Type): 21 nC
Packaging: TO252, TO251, PDFN3.3x3.3, SOT223
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
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BLM30N06L
Trench-gate metal-oxide-semiconductor field-effect transistor
Brand:
Shanghai Belling
Encapsulation:
TO252, TO251, PDFN 3.3 x 3.3, SOT223
Description:
VDS (Max.): 60V / ID (Max.): 25A / RDS(on) (Max.): 25mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 60V
ID (Max.): 25A
RDS(on) (Max.): 25 mΩ
Qg(Type): 21 nC
Packaging: TO252, TO251, PDFN3.3x3.3, SOT223
- VDS (Max.): 60V / ID (Max.): 25A / RDS(on) (Max.): 25mΩ
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
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