BLM16N10
Trench-gate metal-oxide-semiconductor field-effect transistor
Brand:
Shanghai Belling
Encapsulation:
TO220, TO252
Description:
VDS (Max.): 100V / ID (Max.): 60A / RDS(on) (Max.): 16.5 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 60A
RDS(on) (Max.): 16.5 mΩ
Qg(Type): 80 nC
Packaging: TO220, TO252
- VDS (Max.): 100V / ID (Max.): 60A / RDS(on) (Max.): 16.5 mΩ
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
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