BLM08N10
Trench-gate metal-oxide-semiconductor field-effect transistor
Brand:
Shanghai Belling
Encapsulation:
TO220, TO263
Description:
VDS (Max.): 100V / ID (Max.): 110A / RDS(on) (Max.): 8mΩ
Share now
- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 110A
RDS(on) (Max.): 8 mΩ
Qg(Type): 162 nC
Packaging: TO220, TO263
- VDS (Max.): 100V / ID (Max.): 110A / RDS(on) (Max.): 8mΩ
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
Do you need our help?
Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.