BLM07N20
Trench-gate metal-oxide-semiconductor field-effect transistor
Brand:
Shanghai Belling
Encapsulation:
TO264
Description:
VDS (Max.): 200 V / ID (Max.): 155 A / RDS(on) (Max.): 6.5 mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 200V
ID (Max.): 155A
RDS(on) (Max.): 6.5 mΩ
Qg(Type): 527 nC
Package: TO264
- VDS (Max.): 200 V / ID (Max.): 155 A / RDS(on) (Max.): 6.5 mΩ
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
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