BLM06N10
Trench-gate metal-oxide-semiconductor field-effect transistor
Brand:
Shanghai Belling
Encapsulation:
TO220, TO263
Description:
VDS (Max.): 100V / ID (Max.): 140A / RDS(on) (Max.): 6mΩ
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- Product Description
- Description
-
Brand: Shanghai Belling
VDS (Max.): 100V
ID (Max.): 140A
RDS(on) (Max.): 6 mΩ
Qg(Type): 108 nC
Packaging: TO220, TO263
- VDS (Max.): 100V / ID (Max.): 140A / RDS(on) (Max.): 6mΩ
Keywords:
Transistors, trench-gate field-effect transistors, MOSFETs, MOS
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