Shanghai Belling: Recently launched the BL7920 series of enhanced isolated dual-channel gate drivers.
Launched by Shanghai Belling BL7920 The series of enhanced isolated dual-channel gate drivers includes BL7920/BL7920B Two models. The output drive current of this series of gate drivers can reach up to 36V , possessing 8V/11V Two UVLO Options, up to 6A/7A Peak Pull Current / Current capability, capable of driving power MOSFET 、 IGBT and GaN Transistor. This series of gate drivers allows the dead-time to be programmed via an external resistor, and the two outputs can be simultaneously turned off by disabling the function.
BL7920 The series is designed for industrial-grade applications, with an operating temperature range of -40°C To +125℃℃ , and can be widely used in such as x86 Servers, DC charging piles, UPS The market and other industries.
BL7920 Key Advantages of the Series Gate Driver
1. High peak pull current / Current sinking capability.
BL7920 Peak pull current of the series / Current capacity up to 6A/7A, Superior to competing products. This feature can significantly reduce MOSFET/IGBT The time required for gate charging or discharging increases the device’s switching speed.
2. High CMTI Value ·
BL7920 of the series CMTI As high as 150V/ns , it exhibits high tolerance to transient noise, more effectively prevents the occurrence of glitches and latch-up, and thereby avoids chip damage and hazardous situations. Life.
3. High supply voltage
Shanghai Belling's BL7920 The product series boasts up to 36V Output drive power supply voltage, enabling better driving performance. SiCMOSFEF , adapting to a wider range of application scenarios.
4. High peak pull current / Current sinking capability ·
The two output channels are completely independent and can be configured to drive a half-bridge. ( High side + Low side ) , or drive two independent devices ( Such as dual boost tubes )。
5. Integrates a wealth of features and functions.
DIS Pin : Global shutdown control, enabling system-level protection. Undervoltage lockout. : The power supply on the output side of both channels (VDDx) to carry out UVLO Monitoring ensures that the output is forced low when power is insufficient. DT Pin : By connecting external resistors of varying values, a programmable dead-time can be achieved.
6.DT Pin floating protection function ·
BL7920 Series of chips DT When the pin is left floating, the output is forcibly pulled low, thereby preventing… DT The occurrence of spurious signals being output when the pin is not configured.
Product Features
VDDI Operating voltage range :-0.3V~+6V
VDDA/VDDB Operating voltage range :-0.3V~+36
VDDIUVLO:2.5V/2.7V
VDDA/VDDB UVLO: 8.0 V / 8.5 V; 11.0 V / 12.0 V
Peak Pull Current / Injection current :6A/7A
CMTI:150V/ns
Typical rise-time propagation delay :63ns
Typical falling-edge propagation delay :88ns
Maximum pulse width distortion :25ns
Enter minimum pulse width :43ns
VDDI Power-on delay :21us
VDDA/VDDB Power-on delay :166us
Operating temperature range :-40℃~ +125°C
UL1577 Certification ( Verifying… )
VDE Certification ( Verifying… )
Application areas
Server 、 DC charging pile 、 UPS 、 Motor driver
Functional block diagram
BL7920 The series on each output channel's VDD and VSS Each pin is equipped with an internal undervoltage lockout. (UVLO) Protection function. When the device is powered on, if… VDD Voltage lower than VvDD_oN , or below after startup VvDD_OFF， VDD The undervoltage lockout function keeps the channel output at a low level, regardless of the input pin state.
BL7920 the input pin (INA/INB and DIS) Adopt compatibility TTL and CMOS Input threshold logic design, which is associated with the output channel’s VDD The supply voltage is fully isolated. If any input pin is left floating, an internal pull-down resistor will forcibly drive it low. (INA/INB The pull-down resistor of the pin is 200 kΩ ， DIS The pull-down resistor of the pin is 50KQ) 。
BL7920 The series output stage employs a pull-up structure. P Channel MOSFET With additional parallel connection N Channel MOSFET Combinatorial design. N Channel MOSFET Its function is to enhance the peak source‑current output capability and enable fast turn‑on. It can be used when high current is required. ( The Miller plateau phase during the turn-on of the power switching transistor ) Provides an extremely high peak source current. BL7920 The output-stage pull-down structure consists of N Channel MOSFET Composition.
Typical Application—Half-Bridge Driver Circuit
The circuit shown in the figure above illustrates the use of BL7920 Reference design for driving a typical half-bridge topology, applicable to various mainstream power conversion topologies such as synchronous buck, synchronous boost, and half-bridge. / Full-bridge isolated topology and three-phase motor drive applications.
INA/INB Input may be used. RIN-CI A filter is used to eliminate non-ideal layouts or long traces. PCB Ringing phenomenon caused by trace routing.
VCCI 、 VDDA and VDDB Bypass capacitors are critical for achieving reliable performance. It is recommended to select low‑ ESR and low ESL Surface-mount multilayer ceramic capacitor (MLCC) 。
If connecting the microcontroller over a long distance, it is necessary to… DIS Use approximately near the pin 1nF of low ESR/ESL Capacitors are used for bypassing. If not used, DIS Pin; it is recommended to connect it to ground. (GND) To achieve better noise immunity.
External connection RDT The resistor is used to set the dead time. In DT Connect a parallel capacitor near the pin. ≤1nF capacitors to enhance noise immunity. Place Ror and ≤1nF The ceramic capacitor should be placed as close as possible to… DT Pin configuration designed to enhance noise immunity and achieve superior dead-time matching between the two channels.
When selecting an external bootstrap diode, it is recommended to use a high‑voltage fast‑recovery diode or a silicon carbide Schottky diode with low forward voltage drop and low junction capacitance, in order to minimize losses caused by reverse recovery and the associated ground‑bounce noise.
Bootstrap resistor RBooT Used to reduce DBooT the inrush current and limit it within each switching cycle VDDA-VSSA The voltage rise slope, particularly in VSSA(SW) When an excessively large negative transient voltage appears at the pin.
External gate capacitance RoN/RoFr Used for :
a) The limitation is due to parasitic inductance. / Oscillation caused by capacitance.
b) Restrictions imposed by dv/dt、di/dt as well as the ringing phenomenon caused by the reverse recovery of the body diode.
c) Fine-tune the gate drive strength—specifically, the peak current and pull‑down current—to optimize switching losses.
d) Reduce electromagnetic interference (EMI) 。
It is recommended to connect a resistor between the gate and the source. Rs , so that when the gate driver is unpowered and in an undefined state, the gate voltage is pulled down to the source voltage.
Encapsulation
(Source: Shanghai Belling Official Website)
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